Coverart for item
The Resource Compact MOSFET models for VLSI design, A.B. Bhattacharyya, (electronic book)

Compact MOSFET models for VLSI design, A.B. Bhattacharyya, (electronic book)

Label
Compact MOSFET models for VLSI design
Title
Compact MOSFET models for VLSI design
Statement of responsibility
A.B. Bhattacharyya
Creator
Subject
Language
eng
Cataloging source
DLC
http://library.link/vocab/creatorName
Bhattacharyya, A. B.
Illustrations
illustrations
Index
index present
Literary form
non fiction
Nature of contents
bibliography
http://library.link/vocab/subjectName
  • Integrated circuits
  • Metal oxide semiconductor field-effect transistors
Label
Compact MOSFET models for VLSI design, A.B. Bhattacharyya, (electronic book)
Instantiates
Publication
Bibliography note
Includes bibliographical references and index
Color
multicolored
Contents
Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method
Dimensions
unknown
Extent
1 online resource (xxiv, 432 p.)
Isbn
9780470823439
Other control number
  • 10.1002/9780470823446
  • 9786612382109
Other physical details
ill.
Specific material designation
remote
System control number
ocn520990512
Label
Compact MOSFET models for VLSI design, A.B. Bhattacharyya, (electronic book)
Publication
Bibliography note
Includes bibliographical references and index
Color
multicolored
Contents
Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method
Dimensions
unknown
Extent
1 online resource (xxiv, 432 p.)
Isbn
9780470823439
Other control number
  • 10.1002/9780470823446
  • 9786612382109
Other physical details
ill.
Specific material designation
remote
System control number
ocn520990512

Library Locations

Processing Feedback ...