The Resource Hf-based high-k dielectrics : process development, performance characterization, and reliability, Young-Hee Kim, Jack C. Lee, (electronic book)
Hf-based high-k dielectrics : process development, performance characterization, and reliability, Young-Hee Kim, Jack C. Lee, (electronic book)
Resource Information
The item Hf-based high-k dielectrics : process development, performance characterization, and reliability, Young-Hee Kim, Jack C. Lee, (electronic book) represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in Sydney Jones Library, University of Liverpool.This item is available to borrow from 1 library branch.
Resource Information
The item Hf-based high-k dielectrics : process development, performance characterization, and reliability, Young-Hee Kim, Jack C. Lee, (electronic book) represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in Sydney Jones Library, University of Liverpool.
This item is available to borrow from 1 library branch.
- Summary
- In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results fromthe polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdownmay be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices
- Language
- eng
- Extent
- x, 92 p.
- Note
- Series statement from caption on home page
- Contents
-
- Introduction
- Front end device technology evolutions
- Beyond 45nm technology
- Issues in high-k dielectrics
- Hard- and soft-breakdown characteristics of ultrathin HfO2 under dynamic and constant voltage stress
- Motivation for high-k gate dielectrics
- Reliability issues of high-k dielectrics
- Breakdown behaviors of HfO2 under dc stressing
- Dynamic reliability of HfO2
- Impact of high temperature forming gas and D2 anneal on reliability of HfO2 gate dielectrics
- Previous results
- Effect of D2 anneal on various surface preparations
- Effect of high temperature forming gas in terms of reliability
- Effect of barrier height and the nature of bilayer structure of HfO2 with dual metal gate technology
- Motivation
- Experimental procedure
- Results and discussion
- Bimodal defect generation rate by low barrier height and its impact on reliability characteristics
- Motivation
- Experimental procedure
- Results and discussion
- Isbn
- 9781598290042
- Label
- Hf-based high-k dielectrics : process development, performance characterization, and reliability
- Title
- Hf-based high-k dielectrics
- Title remainder
- process development, performance characterization, and reliability
- Statement of responsibility
- Young-Hee Kim, Jack C. Lee
- Language
- eng
- Summary
- In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results fromthe polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdownmay be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices
- Cataloging source
- WAU
- http://library.link/vocab/creatorDate
- 1972-
- http://library.link/vocab/creatorName
- Kim, Young-Hee
- Illustrations
- illustrations
- Index
- no index present
- LC call number
- QC585
- LC item number
- .K55
- Literary form
- non fiction
- Nature of contents
-
- dictionaries
- bibliography
- http://library.link/vocab/relatedWorkOrContributorName
- Lee, Jack Chung-Yeung
- Series statement
- Synthesis lectures on solid state materials and devices
- Series volume
- 1
- http://library.link/vocab/subjectName
-
- Dielectrics
- Hafnium oxide
- Integrated circuits
- Semiconductors
- Breakdown (Electricity)
- Metal oxide semiconductor field-effect transistors
- Label
- Hf-based high-k dielectrics : process development, performance characterization, and reliability, Young-Hee Kim, Jack C. Lee, (electronic book)
- Note
- Series statement from caption on home page
- Bibliography note
- Includes bibliographical references
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
- Introduction -- Front end device technology evolutions -- Beyond 45nm technology -- Issues in high-k dielectrics -- Hard- and soft-breakdown characteristics of ultrathin HfO2 under dynamic and constant voltage stress -- Motivation for high-k gate dielectrics -- Reliability issues of high-k dielectrics -- Breakdown behaviors of HfO2 under dc stressing -- Dynamic reliability of HfO2 -- Impact of high temperature forming gas and D2 anneal on reliability of HfO2 gate dielectrics -- Previous results -- Effect of D2 anneal on various surface preparations -- Effect of high temperature forming gas in terms of reliability -- Effect of barrier height and the nature of bilayer structure of HfO2 with dual metal gate technology -- Motivation -- Experimental procedure -- Results and discussion -- Bimodal defect generation rate by low barrier height and its impact on reliability characteristics -- Motivation -- Experimental procedure -- Results and discussion
- Control code
- ocm62458047
- Extent
- x, 92 p.
- Form of item
- electronic
- Governing access note
- Abstract freely available; full-text restricted to subscribers or individual document purchasers
- Isbn
- 9781598290042
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- Reproduction note
- Electronic resource.
- Specific material designation
- remote
- System details
- System requirements: Adobe Acrobat Reader
- Type of computer file
- PDF format
- Label
- Hf-based high-k dielectrics : process development, performance characterization, and reliability, Young-Hee Kim, Jack C. Lee, (electronic book)
- Note
- Series statement from caption on home page
- Bibliography note
- Includes bibliographical references
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
- Introduction -- Front end device technology evolutions -- Beyond 45nm technology -- Issues in high-k dielectrics -- Hard- and soft-breakdown characteristics of ultrathin HfO2 under dynamic and constant voltage stress -- Motivation for high-k gate dielectrics -- Reliability issues of high-k dielectrics -- Breakdown behaviors of HfO2 under dc stressing -- Dynamic reliability of HfO2 -- Impact of high temperature forming gas and D2 anneal on reliability of HfO2 gate dielectrics -- Previous results -- Effect of D2 anneal on various surface preparations -- Effect of high temperature forming gas in terms of reliability -- Effect of barrier height and the nature of bilayer structure of HfO2 with dual metal gate technology -- Motivation -- Experimental procedure -- Results and discussion -- Bimodal defect generation rate by low barrier height and its impact on reliability characteristics -- Motivation -- Experimental procedure -- Results and discussion
- Control code
- ocm62458047
- Extent
- x, 92 p.
- Form of item
- electronic
- Governing access note
- Abstract freely available; full-text restricted to subscribers or individual document purchasers
- Isbn
- 9781598290042
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- Reproduction note
- Electronic resource.
- Specific material designation
- remote
- System details
- System requirements: Adobe Acrobat Reader
- Type of computer file
- PDF format
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<div class="citation" vocab="http://schema.org/"><i class="fa fa-external-link-square fa-fw"></i> Data from <span resource="http://link.liverpool.ac.uk/portal/Hf-based-high-k-dielectrics--process/jiEZEMYxxFM/" typeof="Book http://bibfra.me/vocab/lite/Item"><span property="name http://bibfra.me/vocab/lite/label"><a href="http://link.liverpool.ac.uk/portal/Hf-based-high-k-dielectrics--process/jiEZEMYxxFM/">Hf-based high-k dielectrics : process development, performance characterization, and reliability, Young-Hee Kim, Jack C. Lee, (electronic book)</a></span> - <span property="potentialAction" typeOf="OrganizeAction"><span property="agent" typeof="LibrarySystem http://library.link/vocab/LibrarySystem" resource="http://link.liverpool.ac.uk/"><span property="name http://bibfra.me/vocab/lite/label"><a property="url" href="http://link.liverpool.ac.uk/">Sydney Jones Library, University of Liverpool</a></span></span></span></span></div>
