Coverart for item
The Resource Hf-based high-k dielectrics : process development, performance characterization, and reliability, Young-Hee Kim, Jack C. Lee, (electronic book)

Hf-based high-k dielectrics : process development, performance characterization, and reliability, Young-Hee Kim, Jack C. Lee, (electronic book)

Label
Hf-based high-k dielectrics : process development, performance characterization, and reliability
Title
Hf-based high-k dielectrics
Title remainder
process development, performance characterization, and reliability
Statement of responsibility
Young-Hee Kim, Jack C. Lee
Creator
Contributor
Subject
Language
eng
Summary
In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results fromthe polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdownmay be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices
Cataloging source
WAU
http://library.link/vocab/creatorDate
1972-
http://library.link/vocab/creatorName
Kim, Young-Hee
Illustrations
illustrations
Index
no index present
LC call number
QC585
LC item number
.K55
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorName
Lee, Jack Chung-Yeung
Series statement
Synthesis lectures on solid state materials and devices
Series volume
1
http://library.link/vocab/subjectName
  • Dielectrics
  • Hafnium oxide
  • Integrated circuits
  • Semiconductors
  • Breakdown (Electricity)
  • Metal oxide semiconductor field-effect transistors
Label
Hf-based high-k dielectrics : process development, performance characterization, and reliability, Young-Hee Kim, Jack C. Lee, (electronic book)
Instantiates
Publication
Note
Series statement from caption on home page
Bibliography note
Includes bibliographical references
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
Introduction -- Front end device technology evolutions -- Beyond 45nm technology -- Issues in high-k dielectrics -- Hard- and soft-breakdown characteristics of ultrathin HfO2 under dynamic and constant voltage stress -- Motivation for high-k gate dielectrics -- Reliability issues of high-k dielectrics -- Breakdown behaviors of HfO2 under dc stressing -- Dynamic reliability of HfO2 -- Impact of high temperature forming gas and D2 anneal on reliability of HfO2 gate dielectrics -- Previous results -- Effect of D2 anneal on various surface preparations -- Effect of high temperature forming gas in terms of reliability -- Effect of barrier height and the nature of bilayer structure of HfO2 with dual metal gate technology -- Motivation -- Experimental procedure -- Results and discussion -- Bimodal defect generation rate by low barrier height and its impact on reliability characteristics -- Motivation -- Experimental procedure -- Results and discussion
Control code
ocm62458047
Extent
x, 92 p.
Form of item
electronic
Governing access note
Abstract freely available; full-text restricted to subscribers or individual document purchasers
Isbn
9781598290042
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Reproduction note
Electronic resource.
Specific material designation
remote
System details
System requirements: Adobe Acrobat Reader
Type of computer file
PDF format
Label
Hf-based high-k dielectrics : process development, performance characterization, and reliability, Young-Hee Kim, Jack C. Lee, (electronic book)
Publication
Note
Series statement from caption on home page
Bibliography note
Includes bibliographical references
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
Introduction -- Front end device technology evolutions -- Beyond 45nm technology -- Issues in high-k dielectrics -- Hard- and soft-breakdown characteristics of ultrathin HfO2 under dynamic and constant voltage stress -- Motivation for high-k gate dielectrics -- Reliability issues of high-k dielectrics -- Breakdown behaviors of HfO2 under dc stressing -- Dynamic reliability of HfO2 -- Impact of high temperature forming gas and D2 anneal on reliability of HfO2 gate dielectrics -- Previous results -- Effect of D2 anneal on various surface preparations -- Effect of high temperature forming gas in terms of reliability -- Effect of barrier height and the nature of bilayer structure of HfO2 with dual metal gate technology -- Motivation -- Experimental procedure -- Results and discussion -- Bimodal defect generation rate by low barrier height and its impact on reliability characteristics -- Motivation -- Experimental procedure -- Results and discussion
Control code
ocm62458047
Extent
x, 92 p.
Form of item
electronic
Governing access note
Abstract freely available; full-text restricted to subscribers or individual document purchasers
Isbn
9781598290042
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Reproduction note
Electronic resource.
Specific material designation
remote
System details
System requirements: Adobe Acrobat Reader
Type of computer file
PDF format

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