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The Resource Layout techniques for MOSFETS, Salvador Pinillos Gimenez

Layout techniques for MOSFETS, Salvador Pinillos Gimenez

Label
Layout techniques for MOSFETS
Title
Layout techniques for MOSFETS
Statement of responsibility
Salvador Pinillos Gimenez
Creator
Author
Subject
Language
eng
Summary
This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on PN junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with Different Channel Lengths Effect (PAMDLE), the Deactivation of the Parallel MOSFETs in the Bird's Beak Regions (DEPAMBBRE), and the Drain Leakage Current Reduction Effect (DLECRE), which are still seldom explored by the semiconductor and CMOS ICs industries. Several three-dimensional (3D) numerical simulations and experimental works are referenced in this book to show how these layout techniques can help the designers to reach the analog and digital CMOS ICs specifications with no additional cost. Furthermore, the electrical performance and ionizing radiation robustness of the analog and digital CMOS ICs can significantly be increased by using this gate layout approach
Member of
Cataloging source
CaBNVSL
http://library.link/vocab/creatorDate
1962-
http://library.link/vocab/creatorName
Gimenez, Salvador Pinillos
Dewey number
621.3815284
Illustrations
illustrations
Index
no index present
LC call number
TK7871.95
LC item number
.G555 2016
Literary form
non fiction
Nature of contents
  • dictionaries
  • abstracts summaries
  • bibliography
http://library.link/vocab/subjectName
  • Metal oxide semiconductor field-effect transistors
  • Integrated circuit layout
Target audience
  • adult
  • specialized
Label
Layout techniques for MOSFETS, Salvador Pinillos Gimenez
Instantiates
Publication
Bibliography note
Includes bibliographical references (pages 61-68)
Carrier category
online resource
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type MARC source
rdacontent
Contents
1. Introduction -- 2. The origin of the innovative layout techniques for MOSFETs -- 2.1 Observing and combining different new effects in MOSFETs -- 3. Diamond MOSFET (hexagonal gate geometry) -- 4. Octo layout style (octagonal gate shape) for MOSFET -- 5. Ellipsoidal layout style for MOSFET -- 6. Fish layout style ("<" gate shape) for MOSFET -- 7. Annular circular gate layout style for MOSFET -- 8. Wave layout style ("S" gate shape) for MOSFET -- 9. Conclusions and comments -- References -- About the author
Control code
201602EET007
Dimensions
unknown
Extent
1 PDF (xi, 69 pages)
File format
multiple file formats
Form of item
online
Isbn
9781627054829
Media category
electronic
Media MARC source
isbdmedia
Other control number
10.2200/S00704ED1V01Y201602EET007
Other physical details
illustrations.
Reformatting quality
access
Specific material designation
remote
System details
System requirements: Adobe Acrobat Reader
Label
Layout techniques for MOSFETS, Salvador Pinillos Gimenez
Publication
Bibliography note
Includes bibliographical references (pages 61-68)
Carrier category
online resource
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type MARC source
rdacontent
Contents
1. Introduction -- 2. The origin of the innovative layout techniques for MOSFETs -- 2.1 Observing and combining different new effects in MOSFETs -- 3. Diamond MOSFET (hexagonal gate geometry) -- 4. Octo layout style (octagonal gate shape) for MOSFET -- 5. Ellipsoidal layout style for MOSFET -- 6. Fish layout style ("<" gate shape) for MOSFET -- 7. Annular circular gate layout style for MOSFET -- 8. Wave layout style ("S" gate shape) for MOSFET -- 9. Conclusions and comments -- References -- About the author
Control code
201602EET007
Dimensions
unknown
Extent
1 PDF (xi, 69 pages)
File format
multiple file formats
Form of item
online
Isbn
9781627054829
Media category
electronic
Media MARC source
isbdmedia
Other control number
10.2200/S00704ED1V01Y201602EET007
Other physical details
illustrations.
Reformatting quality
access
Specific material designation
remote
System details
System requirements: Adobe Acrobat Reader

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