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The Resource Nanoscale MOS transistors : semi-classical transport and applications, David Esseni, Pierpaolo Palestri, and Luca Selmi, (electronic book)

Nanoscale MOS transistors : semi-classical transport and applications, David Esseni, Pierpaolo Palestri, and Luca Selmi, (electronic book)

Creator
Contributor
Summary
  • "Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework Predictive capabilities of device models, discussed with systematic comparisons to experimental results"--
  • "The traditional geometrical scaling of the CMOS technologies has recently evolved in a generalized scaling scenario where material innovations for different intrinsic regions of MOS transistors as well as new device architectures are considered as the main routes toward further performance improvements. In this regard, high-? dielectrics are used to reduce the gate leakage with respect to the SiO2 for a given drive capacitance, while the on-current of the MOS transistors is improved by using strained silicon and possibly with the introduction of alternative channel materials. Moreover, the ultra-thin body Silicon-On-Insulator (SOI) device architecture shows an excellent scalability even with a very lightly doped silicon film, while non-planar FinFETs are also of particular interest, because they are a viable way to obtain double-gate SOI MOSFETs and to realize in the same fabrication process n-MOS and p-MOS devices with different crystal orientations"--
Language
eng
Work
Publication
Extent
1 online resource (xvii, 470 p.)
Contents
  • Machine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential
Isbn
9780511923753
Instance
Label
Nanoscale MOS transistors : semi-classical transport and applications
Title
Nanoscale MOS transistors
Title remainder
semi-classical transport and applications
Statement of responsibility
David Esseni, Pierpaolo Palestri, and Luca Selmi
Creator
Contributor
Subject
Language
eng
Summary
  • "Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework Predictive capabilities of device models, discussed with systematic comparisons to experimental results"--
  • "The traditional geometrical scaling of the CMOS technologies has recently evolved in a generalized scaling scenario where material innovations for different intrinsic regions of MOS transistors as well as new device architectures are considered as the main routes toward further performance improvements. In this regard, high-? dielectrics are used to reduce the gate leakage with respect to the SiO2 for a given drive capacitance, while the on-current of the MOS transistors is improved by using strained silicon and possibly with the introduction of alternative channel materials. Moreover, the ultra-thin body Silicon-On-Insulator (SOI) device architecture shows an excellent scalability even with a very lightly doped silicon film, while non-planar FinFETs are also of particular interest, because they are a viable way to obtain double-gate SOI MOSFETs and to realize in the same fabrication process n-MOS and p-MOS devices with different crystal orientations"--
Assigning source
  • Provided by publisher
  • Provided by publisher
Cataloging source
N$T
http://library.link/vocab/creatorName
Esseni, D.
Dewey number
004.5/3
Illustrations
illustrations
Index
index present
LC call number
TK7871.99.M44
LC item number
E76 2011eb
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorName
  • Palestri, P.
  • Selmi, L.
http://library.link/vocab/subjectName
  • Metal oxide semiconductors
  • Electron transport
  • Nanoelectronics
  • TECHNOLOGY & ENGINEERING / Electronics / Optoelectronics
  • COMPUTERS / Hardware / General
Label
Nanoscale MOS transistors : semi-classical transport and applications, David Esseni, Pierpaolo Palestri, and Luca Selmi, (electronic book)
Instantiates
Publication
Antecedent source
unknown
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
Machine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential
Dimensions
unknown
Extent
1 online resource (xvii, 470 p.)
File format
unknown
Form of item
online
Isbn
9780511923753
Level of compression
unknown
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
ill.
Quality assurance targets
not applicable
Reformatting quality
unknown
Reproduction note
Electronic resource.
Sound
unknown sound
Specific material designation
remote
Label
Nanoscale MOS transistors : semi-classical transport and applications, David Esseni, Pierpaolo Palestri, and Luca Selmi, (electronic book)
Publication
Antecedent source
unknown
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
Machine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential
Dimensions
unknown
Extent
1 online resource (xvii, 470 p.)
File format
unknown
Form of item
online
Isbn
9780511923753
Level of compression
unknown
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
ill.
Quality assurance targets
not applicable
Reformatting quality
unknown
Reproduction note
Electronic resource.
Sound
unknown sound
Specific material designation
remote

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