Hf-based high-k dielectrics : process development, performance characterization, and reliability
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The work Hf-based high-k dielectrics : process development, performance characterization, and reliability represents a distinct intellectual or artistic creation found in Sydney Jones Library, University of Liverpool. This resource is a combination of several types including: Work, Language Material, Books.
The Resource
Hf-based high-k dielectrics : process development, performance characterization, and reliability
Resource Information
The work Hf-based high-k dielectrics : process development, performance characterization, and reliability represents a distinct intellectual or artistic creation found in Sydney Jones Library, University of Liverpool. This resource is a combination of several types including: Work, Language Material, Books.
- Label
- Hf-based high-k dielectrics : process development, performance characterization, and reliability
- Title remainder
- process development, performance characterization, and reliability
- Statement of responsibility
- Young-Hee Kim, Jack C. Lee
- Language
- eng
- Summary
- In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results fromthe polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdownmay be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices
- Cataloging source
- WAU
- Illustrations
- illustrations
- Index
- no index present
- LC call number
- QC585
- LC item number
- .K55
- Literary form
- non fiction
- Nature of contents
-
- dictionaries
- bibliography
- Series statement
- Synthesis lectures on solid state materials and devices
- Series volume
- 1
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<div class="citation" vocab="http://schema.org/"><i class="fa fa-external-link-square fa-fw"></i> Data from <span resource="http://link.liverpool.ac.uk/resource/AVvs9fMK5Fo/" typeof="CreativeWork http://bibfra.me/vocab/lite/Work"><span property="name http://bibfra.me/vocab/lite/label"><a href="http://link.liverpool.ac.uk/resource/AVvs9fMK5Fo/">Hf-based high-k dielectrics : process development, performance characterization, and reliability</a></span> - <span property="potentialAction" typeOf="OrganizeAction"><span property="agent" typeof="LibrarySystem http://library.link/vocab/LibrarySystem" resource="http://link.liverpool.ac.uk/"><span property="name http://bibfra.me/vocab/lite/label"><a property="url" href="http://link.liverpool.ac.uk/">Sydney Jones Library, University of Liverpool</a></span></span></span></span></div>
